5月24日—28日，第38届国际功率半导体器件和集成电路年会（IEEE ISPSD，IEEE The 38th International Symposium on Power SemiconductorDevices and ICs）在美国拉斯维加斯市召开。该会议是功率半导体领域最具影响力的国际学术会议，被誉为该领域的“奥林匹克”盛会。本届大会共录用165篇学术论文（其中Oral报告58篇），集中展示全球功率半导体技术的最新研究成果和发展动态。其中，电子科技大学集成电路学院张波教授带领的功率集成技术实验室（PITeL）被录用22篇论文（牵头发表10篇Oral报告和11篇Poster论文，合作发表1篇），占全球发文总量的13.3%，Oral报告占17.2%。发文总数与Oral报告总数均位居全球首位。这是自2013年以来，功率集成技术实验室第10次斩获ISPSD论文录取数全球第一。
功率集成技术实验室被誉为“功率半导体领域研究最为全面的学术团队”，拥有四十余年的深厚学术积淀。入选论文的主题涵盖了低压功率器件（LVT）、高压器件（HV）、氮化镓功率器件（GaN）、碳化硅功率器件（SiC）、氧化镓超宽禁带功率器件（GaO）和功率集成电路设计（ICD）等领域。这些论文深入探讨了硅基/宽禁带功率半导体理论、新型器件结构、功率集成技术、功率IC设计技术以及可靠性等核心议题。
功率集成技术实验室围绕55 nm/90 nm BCD平台的低压LDMOS器件，开展了AI电源的高效电能转换与器件可靠性研究。在此次会议中，报道了分裂沟道、凹槽栅、网格栅及双栅等多种新型器件结构及自对准形成短沟道的特色工艺，实现了国际领先的低功耗LDMOS器件设计，提升了短沟道稳定性、可靠性和高频DrMOS效率。
面向高压功率器件，实验室进一步提出了650 V超结MOSFET满额电压HTRB等效仿真与多层Buffer优化方案，实现了1000小时、100% Vds HTRB零失效验证。同时，在800 V LDMOS、超结MOSFET反向恢复、低EMI沟槽IGBT及高维持电压SCR ESD保护等方面取得了系列进展，形成了从器件结构创新、可靠性机理揭示到工程化考核验证的系统布局。
实验室报道的硅基功率半导体器件技术成果
实验室积极开展宽禁带功率半导体芯片与集成技术研究。此次会议实验室在GaN领域围绕高可靠功率器件、单片集成保护和高速驱动电路报告了多项成果：针对GaN栅极脆弱、Miller误开启和高dV/dt应力等关键问题，提出了自供能Miller钳位、自生负压关断、片上RC阻尼及高CMTI半桥驱动等技术，为GaN器件在数据中心、高频谐振变换器和高压功率转换中的可靠应用提供了新的电路级解决方案；同时，通过分布式漏端p-GaN电荷补偿、关态辐照损伤定位与动态导通电阻高精度测试，进一步揭示了GaN器件在浪涌、电离辐射和高速开关条件下的退化机制。面向SiC和新型超宽禁带器件，实验室提出了4H-SiC网状横向变掺杂终端、集成沟槽二极管抗单粒子效应的SiC MOSFET、串联SiC DSRD脉冲发生器行为模型及β-Ga₂O₃集成无结二极管RC-FinFET等新方案，并深入研究了总剂量辐照与短路应力在沟槽SiC MOSFET中的耦合失效机理，为高压、高频、低损耗和极端环境下的功率电子系统提供了重要的技术支撑。
实验室报道的宽禁带功率半导体器件及功率IC技术成果
自2006年功率集成技术实验室在IEEE ISPSD会议上实现论文发表零的突破以来，迄今已在该国际会议上发表了150余篇学术论文，是会议历史上发表论文最多的团队。在今年的ISPSD会议中，功率集成技术实验室有19名同学以第一作者身份发表了论文，充分展示了实验室在人才培养方面的显著成效。截至目前，实验室已培养了107名博士和1400余名硕士，被誉为“功率半导体领域最大的人才培养基地”。实验室不断发展壮大，持续为全球功率半导体的发展贡献“中国创新”与“中国力量”。
功率集成技术实验室2026年IEEE ISPSD发表文章列表：
第一单位Oral
1. Dingxiang Maet al., “A Novel Split-Channel LDMOS UsingSelf-Aligned Technology for LowQGDand Short-Channel Effect Suppression in High Frequency DrMOS Application,”202638th International Symposium on Power Semiconductor Devices and ICs (ISPSD),Las Vegas, Nevada, USA, 2026.
2. Jiawei Wanget al., “Grid-Gate LDMOS Achieving Ultra-LowSpecific On-Resistance with Enhanced HCI and Thermal Robustness for DrMOS on a55nm BCD Platform,”2026 38th International Symposium on Power SemiconductorDevices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
3. Daoming Shenet al., “Novel Equivalent Simulation Method andExperimental Zero Failure Verification of Optimized 650V SJ MOSFETs Under 100%Rated Voltage HTRB,”2026 38th International Symposium on PowerSemiconductor Devices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
4. Zhao Qiet al., “A Novel Shunt-Triggered SCR with DualMetal Bridge for Ultra-High Holding Voltage and Robust ESD Protection,”202638th International Symposium on Power Semiconductor Devices and ICs (ISPSD),Las Vegas, Nevada, USA, 2026.
5. Yadong Huanget al., “A 4H-SiC MOSFET Integrated Trench Diodeto Enhance Single-Event Effect Robustness,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
6. Zhao Wanget al., “A Systematic Study of Total Ionizing DoseEffects on P-GaN Gate HEMTs under Off-State Bias,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
7. Jinggui Zhouet al., “p-GaN HEMTs with DistributedDrain-Connected p-GaN Islands for Improved In-situ-RDS(on) Stability UnderSurge Voltage,”2026 38th International Symposium on Power SemiconductorDevices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
8. Nan Nieet al., “A Novel Mesh-like Variation of LateralDoping Termination for 4H-SiC Power Devices,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
9. Limin Chenet al., “A 400V GaN Half-Bridge Gate Driver withSelf-Protected Fast-Charging Bootstrap and Current Balance Switch BasedHigh-CMTI Level Shifter,”2026 38th International Symposium on PowerSemiconductor Devices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
10. Xinyang Liuet al., “A 700-V Monolithic MOS-Emulated GaN PowerIC with Self-Powered Miller Clamping Enabling 70 Vns CMTI in ResonantConverters,”2026 38th International Symposium on Power SemiconductorDevices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
第一单位Poster
1. Dingxiang Maet al., “A Novel Notched-Gate LDMOS for RobustReliability via Electric Field Modulation and Low Gate Charge on 55-nm BCDPlatform,”2026 38th International Symposium on Power Semiconductor Devicesand ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
2. Jiawei Wanget al.,“Experimental Demonstration of a Novel Double-Gate LDMOS with OptimizedConduction and Switching Losses Based on a 55nm BCD Platform,”2026 38thInternational Symposium on Power Semiconductor Devices and ICs (ISPSD), LasVegas, Nevada, USA, 2026.
3. Ziwen Chenet al., “ABehavioral Model for Pulse Generator Based on Series-Connected SiC DSRDs,”202638th International Symposium on Power Semiconductor Devices and ICs (ISPSD),Las Vegas, Nevada, USA, 2026.
4. Heng Zhanget al., “A Monolithically-IntegrableSeries-RC Damping Concept for GaN HEMTs Validated by Board-Level Emulation inDouble-Pulse Tests,”2026 38th International Symposium on PowerSemiconductor Devices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
5. Tongyang Wanget al., “A Novel Trench IGBT with FloatingP-Region Controlled Split Gate for Low EMI Noise,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
6. Hanqing Zhaoet al., “NovelShort-Circuit Failure Mechanisms of Trench SiC MOSFETs suffering Total IonizingDose,”2026 38th International Symposium on Power Semiconductor Devices andICs (ISPSD), Las Vegas, Nevada, USA, 2026.
7. Tongyang Wanget al., “Experimental Demonstration of SuperjunctionMOSFET with Low-Barrier NPN Transistor for Low Reverse Recovery Charge,”202638th International Symposium on Power Semiconductor Devices and ICs (ISPSD),Las Vegas, Nevada, USA, 2026.
8. Kaiwei Daiet al., “Experimental Study on Reverse Conduction FinFETwith Integrated Junctionless Diode,”2026 38th International Symposium onPower Semiconductor Devices and ICs (ISPSD), Las Vegas, Nevada, USA, 2026.
9. Xinyang Liuet al., “A GaN Device with Self-Generated NegativeVoltage for Enhanced Turn-Off Reliability,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
10. Jian Xuet al., “ExperimentalDemonstration of Reduced Bulk Field Mechanism in 800 V LDMOS via a NovelDeep-Trench Sidewall Protection Implantation Technology,”2026 38thInternational Symposium on Power Semiconductor Devices and ICs (ISPSD), LasVegas, Nevada, USA, 2026.
11. Teng Liuet al., “90 nm BCD Platform for 5-24V LDMOS withUltra-Low Specific On-Resistance: Self-Aligned Trimming and Multi-Step FieldPlate,”2026 38th International Symposium on Power Semiconductor Devices andICs (ISPSD), Las Vegas, Nevada, USA, 2026.
参与单位Poster
1. Yuchu Geet al., “Thermal Management of Parallel SiCMOSFETs Using Time-Domain Gate Resistance Modulation,”2026 38th InternationalSymposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas,Nevada, USA, 2026.
