电子论坛:光电子纳米材料在功能薄膜晶体管中的应用

文:隆丽萍 图:隆丽萍 / 来源:电子学院 / 2020-11-04 / 点击量:998

  由电子科学与工程学院主办的“电子论坛”第111期邀请到深圳大学孙振华副研究员,与我校师生共同探讨光电纳米材料在薄膜晶体管中的应用。具体安排如下,欢迎感兴趣的师生参加。

  主 题:Optoelectronic Nano-materials in Functional Thin Film Transistors  

  主讲人:孙振华 博士(深圳大学副研究员)

  时 间:2020年11月6日(周五)10:50-11:40

  地 点:沙河校区电子楼137会议室

  内容简介:

  Nanoparticles possess unique electronic and optoelectronic properties such as tunable bandgap, plasmonic effect, and high absorption cross section. These merits endow this kind of material with different functional role in thin film transistor devices. Here we present three kind of transistors with two of them for photodetection application and one for nonvolatile memory. These devices show excellent performance thanks to the pivotal roles of nanoparticles.

  In the first study, we report on near infrared (NIR) photoconductors made of CVD-grown single-layer graphene coated with PbS QDs and prepared by solution processing. The devices were fabricated on various substrates, including flexible ones, by solution processing and showed high responsivities up to 10 7 AW − 1, which are much higher than the responsivities of the visible-light detector based on CVD grown graphene and PbS thin film prepared by electron beam deposition.

  In the second study, we demonstrate a significant responsivity enhancement in methylammonium lead iodide perovskite (CH3NH3PbI3)–graphene hybrid photodetectors through the insertion of gold nanoparticles (Au-NPs) into the devices. The surface plasmonic effect of Au-NPs increases the light absorption cross-sections of the surrounding perovskite material and thus leads to a higher external quantum efficiency (EQE) and responsivity.

  In the third study, we fabricate a nonvolatile memory with a floating gate structure using ZnSe@ZnS core–shell quantum dots as discrete charge-trapping/tunneling. The floating gate transistor show a good non-volatile memory property, including a large memory windows of 149 V, a stable retention (extrapolated decay less than 50% in 10 years), and a good endurance in 120 writing/erasing cycles.

  主讲人简介:

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  孙振华,副研究员,武汉大学本硕(2009),香港理工大学博士(2012),法国国家科学研究中心(CNRS)博士后(2015),2015年入职深圳大学,深圳市海外高层次C类人才。长期从事光电子器件方面的研究,主要研究内容集中在光电薄膜晶体管这一器件类型上,并与纳米材料科学相交叉。截至目前,共发表SCI科研论文32篇,总引用2317次,H因子为17,包括5篇ESI高被引论文。个人单篇最高引用472次(第一作者)。


                      电子科学与工程学院

                       2020年11月3日



编辑:肖洁  / 审核:林坤  / 发布者:陈伟