电子论坛:Electrostatic Discharge (ESD) Protection of Modern and Future Integrated

文:隆丽萍 图:隆丽萍 / 来源:电子学院 / 2019-12-09 / 点击量:1547

  由电子科学与工程学院主办的“电子论坛”第99期邀请到电子科技大学特聘教授刘俊杰教授,与我校生共同探讨集成电路静电保护的挑战与解决方案。具体安排如下,欢迎感兴趣的师生参加。

  主 题:Electrostatic Discharge (ESD) Protection of Modern and Future Integrated  

Circuits:Challenges and Solutions

  主讲人:刘俊杰(Juin J. Liou)电子科技大学特聘教授

  时 间:2019年12月12日(周四)10:00-11:00

  地 点:沙河校区电子楼137会议室

  内容简介:

  Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components. It is an event in which a finite amount of charge is transferred from one object (i.e., human body) to the other (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and hence more than 35% of single-event catastrophic chip damages can be attributed to the ESD event. This is a problem with increasing significance in modern and future nanoscale technologies in the context of diminishing device dimensions.

  As such, designing on-chip and off-chip ESD structures to protect integrated circuits against the ESD stress is a high priority in the semiconductor industry. The continuing advancement in MOS processing technology makes the ESD-induced failures even more prominent. In fact, many semiconductor companies worldwide are having difficulties in meeting the increasingly stringent ESD protection requirements for various electronics applications, and one can predict with certainty that the availability of effective and robust ESD protection solutions will become a critical and essential factor to the well-being and commercialization of modern and future electronics.

  An overview on the ESD sources, models, protection schemes, and testing will first be given in this talk. This is followed by presenting the design, implementation, and optimization of ESD protection solutions for integrated circuits in Si CMOS, Si BiCMOS, GaAs, GaN, and emerging technologies. Challenges and difficulties associated with the ESD design and optimization for these technologies will be addressed.

  主讲人简介:

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  刘俊杰教授于1987年获得美国佛罗里达大学电子工程专业博士学位,之后在美国中佛罗里达大学任教了超过30年,为学校最高荣誉的飞马杰出教授。他于2017年开始在郑州大学信息工程学院全职工作。刘教授长期致力于半导体器件建模和集成电路静电保护(ESD)的研究,是国际上ESD领域的权威之一。在美国工作期间,刘教授从美国联邦机构、政府和半导体企业获得超过1500万美元的科研经费,来源包括:美国国家自然科学基金、美国高科技计划DARPA、美国国家标准局、美国海军实验室、美国空军实验室、美国国家航空暨太空总署NASA和国际上主要的集成电路公司包括Intel、Texas Instruments、Analog Devices、National Semiconductor, Intersil等。

  刘教授出版专著13本,其中第一作者著书3本,申请美国发明专利15项,发表期刊论文超过310篇(邀请论文22篇)、会议论文超过250篇(邀请报告和邀请论文超过120篇),所发表的论文中,70%的刊物论文发表在本领域排名前三的权威期刊(IEEE Proceeding、IEEE Transactions on Electron Devices和IEEE Electron Device Letter),SCI收录超过300篇, SCI他引超过7000次。作为第一作者发表在电子领域最权威的期刊Proceedings of the IEEE上的20页论文“ESD in Semiconductor Devices: An Overview”和23页论文“ESD in Semiconductor Devices: Protection Techniques”,被IEEE评为目前ESD领域经典的评述论文。

  刘教授在半导体器件建模和ESD领域享有很高的国际学术声誉和地位,多次作邀请报告和论文,作为IEEE Electron Devices Society财务长和副主席,主管全世界180个IEEE分会工作,作为会议主席主持超过50次微电子领域和ESD领域的IEEE国际会议或年会。他在全世界建立了广泛的科研和教育合作网络,包括美国、加拿大、欧洲、日本、韩国、新加坡以及中国台湾、中国香港等。由于对半导体器件的科学研究及学术交流的突出贡献,他被评为Institute of Electrical and Electronic Engineers (IEEE) Fellow, Institute of Engineering Technology (IET) Fellow、Analog Devices (ADI) Fellow, Singapore Institute of Manufacturing Technology (SIMTech) Fellow, 获得了IEEE杰出成就奖、IEEE杰出教育奖、IEEE杰出讲座等和美国政府杰出青年科学家奖等10多项奖。


                        电子科学与工程学院

                         2019年12月9日


编辑:罗莎  / 审核:罗莎  / 发布者:陈伟