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为搭建我校博士后之间的学术交流平台，促进学术水平提升，学校博士后管理办公室组织开展博士后学术沙龙活动。本次沙龙由我校博士后李鹏发、高勇、孙瑞泽分享其研究成果，诚挚邀请感兴趣的师生参加。沙龙还邀请了学校科研院相关领导、电子学院分管科研的副院长、有相关经验的老师一起分享国家自然科学基金申报的经验和心得。
一、时 间：2019年12月6日（周五）11：45
二、地 点：清水河校区经管楼宾诺咖啡
三、主 办：电子科技大学博士后管理办公室
四、承 办：电子科学与工程学院
电子科技大学博士后联谊会
五、活动安排：
报告一：
（1）主题：Research on Scattering Theory of Phase Arrays
（2）主讲人：李鹏发 电子科学与工程学院博士后
（3）交流内容：
Low scattering cross section is of significant importance for radar and aircraft stealth in electronic warfare, therefore antenna scattering theory and methods to minimize antenna scattering has been explored for decades. Dated to 50s~60s in the past century, Collin, Hansen, Munk, etc., proposed and employed effective model of antenna scattering matrix. However, they have only discussed the case with one load, which is not suitable for phase arrays, as always used in radar system.
Fundamental research on phased array scattering theory is presented in this report. The scattering matrix is extended to phased array case, and analytical solution is given by solving linear equations based on the proposed scattering model. According to the theory, array scattering could be separated into two parts, one for the structure scattering with a given series of receiver loads, another for re-radiating of all elements contributed by receiver reflection. The theory gives new analytical and computing methods, which save simulation time by a large amount, and it could also be an important guideline for low scattering antenna and array design.
主讲人简介：
Li Peng-Fa currently works as a Postdoctoral Fellow in the School of Electronic Science and Engineering of University of Electronic Science and Technology of China (UESTC). He obtained his Bachelor degree of EE from UESTC in 2013 and Ph. D. degree of EE from UESTC in 2019. His research interests include phase arrays, near-field focused antennas, MM-wave antennas and low scattering antennas and arrays.
报告二：
（1）主题：Evolution and Analysis of Dielectric Properties of Typical Materials under Strong Microwave Field
（2）主讲人：高勇 电子科学与工程学院博士后
（3）交流内容：
Generally, the dielectric properties of microwave materials are obtained under weak electromagnetic field. However, with the continuous development of high power microwave technology, the microwave field intensity around materials gradually increases, and the test results of the dielectric properties of materials under weak electromagnetic field will not be able to characterize the test results under high power environment. In this talk, a novel testing technology basing on the resonator method is proposed, which provides an effective solution for the measurement and characterization of microwave dielectric properties of materials under strong microwave field. Based on the constructed system, the evolution rules of the microwave characteristics of four typical materials are obtained. In the experiment, the temperature of the samples was precisely monitored, and the test results of the dielectric properties evolution rule of the samples under strong microwave field were compared with the test results of the dielectric properties with the temperature characteristics of the samples under weak electromagnetic field. Through the comparison, it can be found that the effect of strong microwave field on the dielectric properties of materials is not completely caused by the microwave thermal effect, which preliminarily proves that the influence mechanism of strong microwave field on materials has non-thermal microwave effect.
主讲人简介：
Gao Yong currently works as a Postdoctoral Fellow in the School of Electronic Science and Engineering of University of Electronic Science and Technology of China (UESTC). He obtained his Bachelor degree of Electronic Information Engineering from AHNU in 2012 and Ph. D. degree of Electromagnetic Field and Microwave Technology from UESTC in 2019. His research interests include nonlinear dielectric properties of high power microwave material, high power devices feature parameter extraction, passive intermodulation test technology, design of microwave devices, and microwave integrated circuits.
报告三：
（1）主题：All GaN DC-DC Buck Converter IC
（2）主讲人：孙瑞泽 电子科学与工程学院博士后
（3）交流内容：
In order to further utilize the advancing GaN-based device technology in power conversions, the level of integration among main switches, control circuits and passive components is required to be as high as possible. Previously GaN converter ICs were realized using normally-ON MMIC process or normally-OFF HEMT platforms. However, the level of integration is limited, the negative normally-ON threshold voltage requires extra matching network, and Schottky gate restricts gate voltage swing. GaN power IC platform is developed based on Au-free AlGaN/GaN MIS-HEMTs, and a constant-output-ripple all GaN DC-DC buck converter IC is firstly realized with integrated gate driver, pulse width modulation (PWM) feedback control and over-current protection (OCP) circuits.
主讲人简介：
Dr. Ruize Sun currently works as a Postdoctoral Fellow in the School of Electronic Science and Engineering of University of Electronic Science and Technology of China (UESTC). He obtained his B.E. and M.E. degree of microelectronics from UESTC in 2011 and 2014, respectively, and Ph.D. degree from National University of Singapore in 2018. His research interests include novel GaN-based power devices and ICs.
电子科技大学博士后管理办公室
2019年12月4日
编辑：李果 / 审核：李果 / 发布：陈伟
