学　术

　　由电子科学与工程学院主办的“电子论坛”第84期邀请到IEEE Fellow、香港科技大学Prof. Johnny Kin On SIN（单建安 教授）与我校师生共同探讨“硅及碳化硅半导体功率器件的新进展”。具体安排如下，欢迎感兴趣的师生参加。

　　主　题：Some recent advancements in Si and SiC power semiconductor devices

　　主讲人：Prof. Johnny Kin On SIN （IEEE Fellow）

　　主持人：陈星弼 院士 （IEEE Fellow）

　　时　间：2019年9月9日（周一）10:00-11:30

　　地　点：沙河校区电子楼137会议室

　　内容简介：

　　Power semiconductor devices are key components for power management, voltage conversion and motor driving applications. Due to the advent of the renewable energy and robotics eras, and the fast development of electric cars, power semiconductor devices are getting even more important.

　　Among the two most popular semiconductor materials for power devices, silicon has captured majority of the market and silicon carbide is on its way for future high performance applications. In this talk, some of our recent research advancements in Si and SiC power devices will be introduced and discussed. The talk will be ended with a discussion on some of our device implementations in commercial foundries. 　　

　　主讲人简介：

　　Prof. Johnny K. O. Sin（单建安 教授）was born in Hong Kong. He received the B.A.Sc., M.A.Sc., and Ph.D. degrees from the University of Toronto, Toronto, ON, Canada, in 1981, 1983, and 1988, respectively, all in electrical engineering. From 1988 to 1991, he was a Senior Member of the Research Staff of Philips Laboratories, New York. In August 1991, he joined the Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST), Kowloon, Hong Kong, where he has been a Professor since 2001. He is one of the founding members of the department and has served as the Director of the Undergraduate Studies Program in the department, the Director of the Nanoelectronics Fabrication Facility and the Director of the Semiconductor Product Analysis and Design Enhancement Center, HKUST. He is the holder of 22 patents worldwide, and he has published more than 300 papers in technical journals and refereed conferences. His research interests include the general area of microelectronic and nanoelectronic devices and fabrication technology. In particular, he has been working on novel power semiconductor devices and ICs, as well as system-on-a-chip applications using power transistors, thin-film transistors, silicon-on-insulator RF devices, and integrated MEMS devices.

　　Prof. Sin was an Editor of the IEEE Electron Devices Letters from 1998 to 2010. He was an Elected Member of the Electron Device Society (EDS) Administrative Committee from 2002 to 2005 and was Technical Committee member (1999-2014) and Chair (2015) of ISPSD. He was a recipient of the Teaching Excellence Appreciation Award from the School of Engineering, HKUST, in fall 1998. He has started JSAB Limited (HK) for around 10 years, targeting at the commercialization of power semiconductor devices. He is a Fellow of IEEE for contributions to the design and commercialization of power semiconductor devices.

　　　　　　　　　　　　　　　　　　　　　　　电子科学与工程学院

　　　　　　　　　　　　　　　　　　　　　　　　 2019年9月3日