电子论坛第30期:III-V Compound Semiconductor Devices for Future Electronics

文:倪祖旭 图:倪祖旭 / 来源:电子学院 / 2018-08-05 / 点击量:1578

  题 目:III-V Compound Semiconductor Devices for Future Electronics

  时 间:2018年8月8日(周三)10:00

  地 点:沙河校区电子楼137会议室

  报告简介:

  Innovating electronic materials and related process technologies are critical in achieving advanced devices with high performances and new systems with complex functions.

  III-V compound semiconductors are attractive due to their small effective masses and high electron mobility. My research has been focused on design and fabrication of electron devices with III-V compound semiconductors. In this talk, I will talk about InAs/AlSb/GaSb tunneling field effect transistors (TFETs) and InAs MOSFETs on silicon for low power applications and high speed applications. The motivations and operating principles will be presented for both transistors. The novel material designs, fabrication process technology and device design, will be discussed. Tunneling field effect transistors with high on-current density were achieved. Approaches for high speed III-V MOSFETs will also be discussed. 

  At the end, future work will be discussed in terms of further developing new materials, devices and technology, integration of these novel devices on silicon substrates and realizing novel systems for our daily life applications.

  主讲人简介:

电子论坛第30期-Yuping.png

  Dr. Yuping Zeng is currently an assistant professor at University of Delaware. She worked as a postdoctor under Prof. Chenming Hu and Ali Javey in University of California at Berkeley. She has been working on various projects on III-V compound semiconductor electron devices, such as InAs Tunneling Field Effect Transistors (TFETs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Fin Field Effect Transistors (FinFETs). She received her PhD degree in Swiss Federal Institute of Technology in 2011. During her PhD study, she worked on optimizations of design and fabrication process of high speed InP/GaAsSb double heterojunction bipolar transistors (DHBTs) under Prof. Colombo Bolognesi. She obtained her Master degree in National University of Singapore where her main research was on nanoscale material process and characterizations. She is one of the 20 gift-young students who were selected to Jilin University at the age of 15 in 1994 for a gift-young university program in China and obtained her Bachelor’s degree when she was less than 19. Several facets of her research activity are reflected in 32 journal papers and 19 international conference papers. Dr. Zeng is a recipient of the 2009 Chinese Government Award for Outstanding Self-financed Students Abroad. Her research interests are continued on advanced devices and systems for low power applications and high performance applications by innovations in device design, material design and fabrication technology.


                     电子科学与工程学院

                      2018年8月3日


编辑:罗莎  / 审核:罗莎  / 发布者:陈伟